• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    Predict the replacement time of the reaction gas jet plate of the plasma etching equipment by detecting the micro pressure change caused by the damage of the micropores formed in the reaction gas jet plate due to the deterioration of the particles and the reaction gas jet plate caused by plasma and plasma etching. A method and an implementation apparatus thereof are disclosed. According to the present invention, adjusting the pressure and flow rate of the reaction gas injected into the etching chamber through the reaction gas jet plate, measuring the pressure inside the reaction gas jet plate, and measuring the pressure inside the reaction gas jet plate By generating an alarm and an alarm when the pressure inside the reaction gas jet plate is included in a set value for warning the replacement of the reaction gas jet plate, and measuring the pressure inside the reaction gas jet plate again to measure the pressure inside the reaction gas jet plate. It is characterized by estimating whether to replace the reaction gas jet plate by determining whether the reaction gas jet plate is included in the replacement range.
    公开号:KR19990056586A
    申请号:KR1019970076584
    申请日:1997-12-29
    公开日:1999-07-15
    发明作者:이광명；양윤식
    申请人:윤종용；삼성전자 주식회사；
    IPC主号:
    专利说明:

    Prediction method and apparatus for replacing reaction gas jet plate in plasma etching equipment
    The present invention relates to a method and apparatus for predicting a replacement time of a reaction gas jet plate of a plasma etching facility, and more particularly, to a fine gas formed in a reaction gas jet plate by deterioration of particles and a reaction gas jet plate caused by plasma and plasma etching. The present invention relates to a method for predicting a replacement time of a reaction gas jet plate of a plasma etching facility by sensing a micro pressure change caused by damage to pores, and a device for implementing the same.
    As is widely known, in order to produce semiconductor products having high integration and high performance by semiconductor manufacturing processes, various and precise semiconductor manufacturing processes are required. Such semiconductor processes include epitaxial growth processes, diffusion, ion implantation, etching, chemical vapor deposition, and assembly (pakaging) processes.
    Of these, the etching process is particularly important for increasing the integration of semiconductor products. The etching process is a desired part without invading a pattern already formed on a high-purity silicon substrate (hereinafter referred to as a wafer) that is a parent material of semiconductor products. It is a process of forming a new pattern in the pattern formed by opening or etching a bay.
    Various kinds of such etching processes have been developed, such as dry, wet, and plasma etching, and recently, plasma etching has been spotlighted due to various advantages. The plasma etching apparatus vacuums a chamber in which a wafer coated with a photoresist film to form a pattern is placed therein, and then supplies a predetermined amount of reaction gas strongly reacted with the photoresist film in the chamber, and then supplies RF power to the reaction gas molecules. Frequence power is applied to orbit the outermost electrons of the reaction gas molecules to generate ions with high energy and to be deorbitated to make the reaction gas into a plasma state.
    A general plasma etching apparatus includes a plasma etching chamber for performing plasma etching, a reaction gas supply unit supplying a reaction gas to the plasma etching chamber, and an RF power unit for making the supplied reaction gas into a plasma state.
    The plasma etching chamber is composed of a susceptor to which RF power is applied while the wafer is seated, and a reactive gas jet plate formed at a predetermined distance from the susceptor.
    The reaction gas injection plate communicates with the reaction gas supply plate so that the reaction gas is supplied with a flow rate and pressure adjusted to the process conditions.
    In addition, fine holes are uniformly formed in the reaction gas jet plate so that the reaction gas supplied from the reaction gas supply part is very evenly injected onto the wafer. The amount of reaction gas injected onto the wafer varies depending on the distribution of the micropores and the large and small areas of the micropores.
    As such, when the reaction gas injected through the reaction gas jet plate reaches the RF field, the reaction gas is very reactive, and only the desired pattern is etched among the patterns formed on the wafer by the reaction gas in the plasma state.
    However, the fine pores formed in the reaction gas jet plate for injecting the reaction gas to the wafer in the conventional plasma etching equipment is uniformly formed by the reduction of the small pores due to the particles and deterioration generated by etching the pattern formed on the wafer, damage by the plasma, etc. Some of the micropores were blocked or the pore area was reduced, resulting in an uneven amount of reaction gas injected into the wafer, resulting in secondary process defects. Therefore, the reaction gas jet plate must be replaced after a certain period of time.
    The timing of replacement of the reaction gas jet plate is determined by counting the accumulated number of wafers processed in the plasma etching chamber and how many times the RF power is turned on / off, but this results in very empirical and inaccurate results. It is causing the problem of not knowing exactly when to replace.
    Accordingly, the present invention has been made in view of such a conventional problem, and an object of the present invention is to install a digital pressure gauge at a reaction gas supply part connected to the reaction gas injection plate, so that the digital pressure gauge is a part of the micropores of the reaction gas injection plate. By measuring the micro pressure change as the area of the blockage or part is reduced, it predicts the replacement time of the reaction gas injection tube of the plasma etching equipment and prevents the process defects caused by missing the replacement time of the reaction gas injection plate. .
    1 is a conceptual diagram illustrating an apparatus for predicting replacement time of a reaction gas jet plate of a plasma etching apparatus according to the present invention;
    2 is a flowchart illustrating a method for predicting replacement time of a reaction gas jet plate of a plasma etching facility according to the present invention.
    In order to achieve the object of the present invention, a method of predicting a replacement time of a reaction gas jet plate of a plasma etching apparatus includes adjusting a pressure and a flow rate of a reaction gas injected into the etching chamber through the reaction gas jet plate, and reactant gas jet plate. Measuring an internal pressure, and generating an alarm or alarm when the pressure inside the reaction gas jet plate is included in a set value for warning the replacement of the reaction gas jet plate by measuring the pressure inside the reaction gas jet plate, and reacting the reaction. The pressure inside the gas injection plate is measured again to determine whether the pressure inside the reaction gas injection plate is included in the range for replacing the reaction gas injection plate, and the replacement gas injection plate may be estimated.
    Preferably, after the step of determining whether the internal pressure of the reaction gas jet plate is included in the range to replace the reaction gas jet plate, if the pressure inside the reaction gas jet plate is included in the replacement range of the reaction gas jet plate to generate an interlock It further comprises a step.
    Preferably, after the interlocking step, the gas injection plate may be replaced.
    The reaction gas jet plate replacement time predicting device for implementing the method of the present invention includes a reaction gas control unit for supplying a reaction gas for etching a pattern formed on a wafer to the etching chamber, and a reaction supplied from the reaction gas control unit. A reaction gas injector in communication with the reaction gas control unit for uniformly injecting the gas to the wafer located inside the etching chamber, a pressure sensing unit measuring the pressure of the reaction gas control unit to predict the replacement time of the reaction gas injector; And a detection signal analysis unit for comparing and analyzing the pressure measured by the pressure detection unit and the preset pressure of the replacement gas injection unit.
    Preferably, the pressure detector receives an analog pressure signal, outputs a digital pressure signal, and inputs the output digital signal to the detection signal analyzer.
    Hereinafter, referring to the accompanying drawings, the reaction gas injection plate replacement time prediction apparatus of the present invention plasma etching equipment is as follows.
    Reaction gas injection plate replacement time predicting device of the plasma etching equipment as a whole, the reaction gas control unit 100 for adjusting the pressure and flow rate of the reaction gas and the reaction gas supplied from the reaction gas control unit 100 to proceed with the process A pressure sensing unit 60 formed between the etching chamber 80, the etching chamber 80, and the reaction gas control unit 100 to measure a pressure change of the reaction gas flowing into the etching chamber 80, and a pressure sensing unit; The detection signal analyzer 70 detects and analyzes the pressure signal detected by the unit 60.
    In more detail, these reaction gas control part 100 is provided with the reaction gas cylinder which supplies a reaction gas, and the gas supply pipe 5 communicates with the valve of a cylinder. At the end of the gas supply pipe 5, a regulator 10 for uniformly supplying the reaction gas and regulating the pressure of the reaction gas is formed, and the pressure gauge 15 is attached to the regulator 10.
    The regulator 15 communicates with one end of the gas supply pipe 25 in which the gas filter 20 for filtering impurities contained in the reaction gas is provided again.
    The other end of the gas supply pipe 25 is etched with a first air valve 30 for setting the pressure of the reaction gas to the process pressure once again and a mass flow controller 40 for controlling the flow rate of the reaction gas. The second air valve 50 which serves as a shutoff valve for supplying / off supplying the reaction gas to the chamber 80 is continuously installed.
    The gas supply pipe 55 is again communicated with the second air valve 50 formed at the last end, and the end of the gas supply pipe 55 is inserted into the etching chamber 80 and then sealed.
    The etching chamber 80 supplies RF power to the chamber body 88, the susceptor 84 on which the wafer on which the pattern to be etched is formed, and the susceptor 84 are supplied. The RF power supply unit 86 and the susceptor 84 are disposed at a predetermined distance from the reaction gas injection plate 82 for injecting the reaction gas into the wafer.
    The reaction gas jet plate 82 is in communication with the gas supply pipe 55 connected to the second air valve 50 mentioned above.
    The reaction gas injecting plate 82 is hollow and has a short cylindrical shape in which both ends are clogged. At one end of the cylinder, a gas supply pipe 55 connected to the second air valve 50 communicates with the reaction gas injecting plate 82. A plurality of micropores are formed in the other end of the pattern in a constant pattern.
    On the other hand, the pressure sensing unit 60 is installed in the gas supply pipe 55 connected to the second air valve 50.
    The pressure sensing unit 60 is formed at the end of the branch pipe 65 branched from the gas supply pipe 55 in a T shape. The pressure sensing unit 60 formed at the end of the branch pipe 65 detects an analog pressure and generates a digital signal corresponding thereto. It is inputted and analyzed to calculate the replacement time of the reaction gas jet plate.
    Referring to the accompanying flowchart of the reaction gas injection plate replacement time prediction method of the present invention plasma etching equipment by such a configuration as follows.
    First, when the reaction gas injection plate replacement timing prediction of the plasma etching equipment is started, the pressure of the reaction gas to be introduced into the etching chamber by the regulator 10 of the reaction gas control unit 100 is adjusted (step 10).
    When the pressure of the reaction gas is adjusted, the reaction gas whose pressure is adjusted to remove impurities in the reaction gas passes through the gas filter 20 to perform filtering.
    As such, the reaction gas, which has been completed until the pressure adjustment and the filtering, is adjusted to flow the reaction gas so that the reaction gas at the flow rate corresponding to the process environment flows into the etching chamber 80 (step 20).
    As such, the reaction gas in which the pressure, filtering, and flow rate adjustment of the reaction gas is completed is introduced into the etching chamber 80, and at this time, the reaction gas introduced into the etching chamber 80 is formed in the reaction gas jet plate. It is injected into the wafer through the pores.
    At this time, as the time used elapses, the micropores of the reaction gas jet plate tend to be partially blocked, and when the micropores of the reaction gas jet plate 82 are partially blocked, the reaction gas cannot properly pass through the micropores. do. As a result, the reaction gas supplied to the reaction gas jet plate 82 at a constant flow rate and pressure through the flow rate adjusting unit 40 does not escape through the micropores, thereby increasing the internal pressure of the reaction gas jet plate 82 gradually. It tends to increase.
    The cause of the increase in the internal pressure of the reaction gas jet plate 82 is directly related to how much the micropores of the reaction gas jet plate 82 are blocked.
    For this reason, it is possible to calculate the replacement time of the reaction gas jet plate 82 by measuring the gas pressure of the portion in communication with the reaction gas jet plate 82, thereby obtaining the replacement time calculation data of the reaction gas jet plate 82. In order to measure the internal pressure of the reaction gas injection pipe 82 by the pressure sensing unit 60 (step 30).
    At this time, the pressure inside the reaction gas jet plate 82 measured by the pressure sensing unit 60 is input to the detection signal analyzer 70 in the form of a digital signal, and the detection signal analyzer 70 detects the measured pressure and the detection. The pressure preset in the signal analyzer is analyzed to determine whether the replacement time of the reaction gas jet plate is within an alarm range (step 40).
    As a result of the determination, if the internal pressure of the reaction gas jet plate 82 is in the alarm range, an alarm and an alarm are generated (step 42), and the process is continued (step 43).
    After a certain time while the process is in progress, the pressure inside the reaction gas jet plate 82 is measured again to determine whether the internal pressure of the reaction gas jet plate 82 is in the replacement range beyond the alarm range (step 44).
    As a result of the determination, if the pressure inside the reaction gas jet plate 82 is not included in the replacement range at this time, the feedback to the step of generating an alarm and an alarm periodically.
    As a result, if the pressure inside the reaction gas jet plate 82 is included in the replacement range, the plasma etching equipment generates an interlock for stopping the process until the reaction gas jet plate 82 is replaced (step 46).
    After that, when the reaction gas jet plate 82 is replaced, the interlock is released and the process is resumed.
    If the internal pressure of the reaction gas jet plate 82 is not in the alarm range in step 40, the process is normally performed while checking whether the internal pressure of the reaction gas jet plate 82 is in the alarm range at regular intervals.
    As described in detail above, by measuring and analyzing the pressure inside the reaction gas jet plate for injecting the reaction gas into the etching chamber of the plasma etching equipment to predict the replacement time of the reaction gas jet plate in a timely manner It is effective in preventing process defects caused by failure to replace.
    权利要求:
    Claims (5)
    [1" claim-type="Currently amended] Adjusting a pressure and a flow rate of the reaction gas injected into the etching chamber through the reaction gas injection plate;
    Measuring the pressure inside the reaction gas jet plate;
    Measuring the pressure inside the reaction gas jet plate and generating an alarm and an alarm when the pressure inside the reaction gas jet plate is included in a set value for warning the replacement of the reaction gas jet plate;
    Plasma etching equipment for measuring the pressure inside the reaction gas jet plate again to determine whether the pressure inside the reaction gas jet plate is within the range to replace the reaction gas jet plate to predict the replacement time of the reaction gas jet plate To predict when to replace the reaction gas jet.
    [2" claim-type="Currently amended] According to claim 1, After the step of determining whether the internal pressure of the reaction gas jet plate is in the range to replace the reaction gas jet plate, the pressure inside the reaction gas jet plate is included in the replacement range of the reaction gas jet plate When the reaction gas injection plate replacement time prediction method of the plasma etching equipment further comprising the step of generating an interlock.
    [3" claim-type="Currently amended] The method of claim 2, further comprising replacing the gas jet plate after the interlocking step.
    [4" claim-type="Currently amended] A reaction gas control unit for supplying a reaction gas for etching the pattern formed on the wafer to the etching chamber;
    A reaction gas injection unit in communication with the reaction gas control unit for uniformly spraying the reaction gas supplied from the reaction gas control unit to a wafer located inside the etching chamber;
    A pressure sensor for measuring a pressure of the reaction gas control unit to predict a replacement time of the reaction gas injection unit;
    And a detection signal analysis unit for comparing and analyzing the pressure measured by the pressure detection unit and the preset replacement time pressure of the reaction gas injector.
    [5" claim-type="Currently amended] The apparatus of claim 4, wherein the pressure detector receives an analog pressure signal, outputs a digital pressure signal, and inputs the output digital signal to the detection signal analyzer. .
    类似技术:
    公开号 | 公开日 | 专利标题
    JP5844757B2|2016-01-20|Etching system and etching method
    JP6088493B2|2017-03-01|Gas distribution system for ceramic showerhead in plasma etching reactor
    US7077973B2|2006-07-18|Methods for substrate orientation
    US7591923B2|2009-09-22|Apparatus and method for use of optical system with a plasma processing system
    TWI609442B|2017-12-21|Variable showerhead flow by varying internal baffle conductance
    US10222810B2|2019-03-05|Methods for monitoring a flow controller coupled to a process chamber
    DE69727624T2|2004-10-14|Inductively coupled HDP-CVD reactor
    US5616181A|1997-04-01|MBE apparatus and gas branch piping apparatus
    TW201719075A|2017-06-01|Method for checking leakage of valves in a gas supply system
    JP4005229B2|2007-11-07|Chemical vapor deposition apparatus for semiconductor device manufacturing and cleaning method thereof
    KR101255873B1|2013-04-17|Ozone system for multi-chamber tools
    US6193783B1|2001-02-27|Apparatus and method for supplying a process solution
    US10170280B2|2019-01-01|Plasma reactor having an array of plural individually controlled gas injectors arranged along a circular side wall
    TWI393802B|2013-04-21|Chemical vapor deposition apparatus capable of controlling discharging fluid flow path in reaction chamber
    KR20130054099A|2013-05-24|Apparatus and method for plasma treatment
    JP6268091B2|2018-01-24|Method for in-situ calibration of flow controller
    US6772072B2|2004-08-03|Method and apparatus for monitoring solid precursor delivery
    KR101113776B1|2012-02-27|Semiconductor manufacturing gas flow divider system and method
    JP4914119B2|2012-04-11|Plasma processing method and plasma processing apparatus
    JP4317701B2|2009-08-19|Processing result prediction method and prediction apparatus
    JP4601439B2|2010-12-22|Plasma processing equipment
    JP4448335B2|2010-04-07|Plasma processing method and plasma processing apparatus
    JP4484997B2|2010-06-16|Accelerated plasma cleaning
    US20030039951A1|2003-02-27|Apparatus and process for controlling the temperature of a substrate in a plasma reactor
    US7086410B2|2006-08-08|Substrate processing apparatus and substrate processing method
    同族专利:
    公开号 | 公开日
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1997-12-29|Application filed by 윤종용, 삼성전자 주식회사
    1997-12-29|Priority to KR1019970076584A
    1999-07-15|Publication of KR19990056586A
    优先权:
    申请号 | 申请日 | 专利标题
    KR1019970076584A|KR19990056586A|1997-12-29|1997-12-29|Method and apparatus for predicting replacement time of reactive gas jet plate in plasma etching facility|
    [返回顶部]